MJE2955 PNP Power Transistor

Description

MJE2955T is a general-purpose PNP power transistor manufactured with the epitaxial base process and is mounted in a hermetically sealed metal case. This device is designed for general purpose switching and amplifier applications. MJE2955T Pinout Configuration Like any other transistor, MJE2955T has three pins namely EMITTER, BASE, and COLLECTOR. The pin configuration of MJE2955T is given below. Pin Number Pin Name Description 1 Base Controls the biasing of the transistor 2 Collector Electrons Emitted from Emitter Collected by the Collector 3 Emitter Electrons emitted from the Emitter into the first PN junction Features and Specifications Bi-Polar PNP Power Transistor DC Current Gain (hFE) is 70 maximum Continuous Collector current (IC) is 10A Emitter Base Voltage (VBE) is 5V Base Current (IB) is 6A maximum Available in TO-220 Package Maximum Collector-Emitter Voltage (Vce): 60 V Collector Dissipation: 75 W Transition Frequency: 2 MHz Operating Junction Temperature Max (Tj): 175 °C Operating and Storage Junction Temperature Range -55 to +150 °C Note: Complete technical details can be found in the MJE2955T Transistor datasheet given at the end of this page. How to use MJE2955T Transistor in a Circuit The MJE2955T transistor is a very versatile transistor that can be used in many different applications. It is used in high power applications where the need to control high power lodes becomes necessary. The frequency range of this transistor is quite limited which is why it is mos