BC847B 1F 45V 200mW 200@2mA,5V 100mA NPN SOT-23 SMD Bipolar Transistors – BJT

Description

Manufacturer Jiangsu Changjing Electronics Technology Co., Ltd. Mfr. Part # BC847 1F Package SOT-23 Datasheet Jiangsu Changjing Electronics Technology Co., Ltd. BC847 1F Description 45V 200mW 200@2mA,5V 100mA NPN SOT-23 Bipolar Transistors – BJT ROHS Specifications Attribute Value Category Triode/MOS Tube/Transistor/Bipolar Transistors – BJT Datasheet Jiangsu Changjing Electronics Technology Co., Ltd. BC847 1F RoHS Collector Cut-Off Current (Icbo) 100nA Collector-Emitter Breakdown Voltage (Vceo) 45V Power Dissipation (Pd) 200mW DC Current Gain (hFE@Ic,Vce) 200@2mA,5V Collector Current (Ic) 100mA Transition Frequency (fT) 100MHz Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 500mV@100mA,5mA Transistor Type NPN