BU2520DF NPN Power Transistor SOT199

Description

Specifications: Type Designator: BU2520DF Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 45 W Collector-emitter voltage peak value: 1500 V Collector-emitter voltage (open base): 800 V Collector-emitter saturation voltage: 5 V Maximum Collector Current |Ic max|: 10 A Max. Operating Junction Temperature (Tj): 150 °C Collector Capacitance (Cc): 115 pF Forward Current Transfer Ratio (hFE), MIN: 5 Package: SOT199 Datasheet