BD907 TO-220 Bipolar Transistors – BJT

Description

Description: DCCurrentGain -: hFE = 40@ IC= 0.5A Collector-Emitter Sustaining Voltage-: VCEO(SUS)= 60V(Min) Complement type BD908 Minimum Lot-to-Lot variations for robust device performance and reliable operation Applications: Designed for use in general-purpose power amplifiers and switching applications. Specifications: SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 20 A IB Base Current 5 A PC Collector Power Dissipation @ TC=25℃ 90 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ BD907 Datasheet